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张法碧 正高级 (540084408@qq.com)    

太阳成集团tyc122cc    

宽禁带半导体;透明氧化物薄膜与器件;半导体发光;

个人简介

张法碧,男,教授,博士生导师,本科和硕士毕业于哈尔滨工业大学,博士毕业于日本佐贺大学。“广西E层次人才”,"广西创新人才培养示范",广西高校引进海外高层次人才“百人计划”,“广西高等学校千名中青年骨干教师培育计划”人选,“日本文部科学省奖学金”获得者。研究领域:微电子与固体电子学。研究方向:紫外探测材料器件、宽禁带半导体材料与器件、二维材料与器件、透明氧化物薄膜与器件、功率器件。主持国家自然科学基金地区项目一项,参与两项;主持广西中青年基础能力提升项目一项;主持广西重点实验室主任基金项目三项;参与广西自然科学基金两项。Applied physics letters, Thin solid film, Journal of alloy and compounds等国际著名期刊发表论文近百篇,多篇论文被引用超过200;成果获得美国空军研究实验室、美国华盛顿大学、意大利卡利亚里大学等机构的一致好评与引用。曾经获得过国家多媒体课件大赛理工组二等奖,广西教育技术应用大赛特等奖,广西教学成果二等奖。

 

教育背景

(1) 2012-10 至 2016-02, 佐贺大学, 电气电子, 博士

 (2) 2001-09 至 2003-07, 哈尔滨工业大学, 材料学, 硕士 

(3) 1997-09 至 2001-07, 哈尔滨工业大学, 材料工程, 学士


 

工作经历

(1) 2018-12 至 今, 太阳成集团tyc122cc, 信息与通信学院, 教授 

(2) 2019-02 至 2020-05, 日本佐贺大学, 电子电气-访问学者, 无 

(3) 2012-12 至 2018-11, 太阳成集团tyc122cc, 信息与通信学院, 副教授 

(4) 2003-07 至 2012-12, 太阳成集团tyc122cc, 信息与通信学院, 讲师 

(5) 2009-07 至 2010-01, 日本佐贺大学, 电气电子-访问学者, 无

主要荣誉

《现代模拟集成电路系列课程》广西教育成果二等奖,2009,排名4

《高频电子电路网络课程》在2008年全国多媒体课件大赛二等奖,排名2

《绪论及调幅电路》广西第二届教育技术应用大赛特等奖,2009,排名2

《固态电子学CAI课件》获得桂电课件大赛优秀奖,2007,排名1

 

学术活动

 (-3) Fabi Zhang, the 7th Global Conference on Materials Science and Engineering (CMSE2018), Xi ’an , China, November 1-4, 2018, China

(-2) Fabi Zhang , Haiou Li1, Qi Li, Yonghe Chen, Tao Fu, Tangyou Shun, and Qixin Guo,Growth and characterization of (GaIn)2O3 films for UV detection application,International Workshop on UV Materials and Devices,Kunming, December 9-12,2018, China

(-1) Fabi Zhang, Haiou Li, Qi Li, Yonghe Chen, Tao Fu, Gongli Xiao, Tangyou Shun, Yanrong Deng and Qixin Guo, Ultraviolet photodetectors based on monoclinic and cubic (GaIn)2O3 films, The 5th International Conference on Nanomechanics and Nanocomposites (ICNN5) 22 to 25 August 2018, Fukuoka Institute of Technology, Fukuoka, Japan

 (1)Fabi Zhang, Haiou LI, Qi Li, Tao Fu, Gongli Xiao, Zhujun Qin1and Qixin Guo,Variation of optical properties between amorphous and crystalline Ga2O3 films,19th International Conference on Physics of Light-Matter Coupling in Nanostructures,成都,2018.5.14-19

(2) Fabi Zhang,Haiou Li,Qixin Guo,Recently progress on (GaIn)2O3 thin films grown by PLD, 第一届海峡两岸氧化镓及相关材料与器件研讨会, 上海, 2017.11.18-2017.11.21

(3) 张法碧,李海鸥,李琦,傅涛,陈永和,肖功利,郭其新, 用于紫外探测器的镓铟氧薄膜制备与表征, 第四届新型光电探测技术及应用研讨会, 南京, 2017.10.24-2017.10.26

(4) 张法碧; 李海鸥; 李琦; 傅涛; 陈永和; 肖功利; 郭其新, 退火镓铟氧合金薄膜的结构与性质, 中国材料大会, 银川, 2017.7.6-2017.7.12

(5) Fabi Zhang,Qixin Guo, 基于(Ga1-xInx)2O3薄膜的紫外探测器, 2016年亚洲材料联合大会, 青岛, 2016.10.20-2016.10.24

(6) Fabi Zhang,Qixin Guo, 硅掺杂的Ga2O3薄膜的光学和电学性质, 2016国际光电与微电子技术应用大会, 上海, 2016.10.10-2016.10.12

 (7) Fabi Zhang,Qixin Guo, 厚度对Ga2O3薄膜性质的影响, 2016年国际紫外材料与器件研究会议, 北京大学, 2016.07.25-2016.07.31

(8) Fabi Zhang,Qixin Guo, 利用脉冲激光沉积硅掺杂的Ga2O3薄膜, 2015氧化镓相关材料小组会议, Kyoto, 2015.11.03-2015.11.06

(9) Fabi Zhang, 应用于水分解的(GaIn)2O3薄膜生长, 利用先进设备来研究“农业、渔业、食品、环境”讨论会, 日本,鸟栖, 2014.10.07-2014.10.07

(10) Zhang Fabi, (GaIn)2O3薄膜的结构与光学性质, 第十五届亚洲材料联合大会, Fukuoka University, 2014.08.27-2014.08.29

(11) Fabi Zhang, 蓝宝石表面利用PLD生长(GaIn)2O3薄膜, 九州地区第六十六届电子与电子工程联合会议熊本大学2013.09.23-2013.09.24

 

 

教学信息

半导体物理、微电子器件基础、半导体集成电路

主要论文


第一作者,通讯作者论文:

(21) Fa-bi ZHANG, Jin-yu SUN, Hai-ou LI, Juan ZHOU, Rong WANG, Tang-you SUN, Tao FU,Gong-li XIAO, Qi LI, Xing-peng LIU, Xiu-yun ZHANG, Dao-you GUO , Xiang-hu WANG, Zu-jun QIN, Bandgap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering, Front. Inform. Technol. Electron Eng. 2021, 22(10):1370

(20) Shunli Wang, Chao Wua, Fengmin Wu,∗, Fabi Zhang,∗, Aiping Liu, Nie Zhao, Daoyou Guo,∗Flexible, transparent and self-powered deep ultraviolet photodetector based on Ag NWs/amorphous gallium oxide Schottky junction for wearable devices,Sensors and Actuators A: Physical,330 (2021) 112870.

(19) Tangyou Sun , Hui Shi , Le Cao , Yun Liu , Jie Tu , Meijun Lu , Haiou Li ,Wenning Zhao , Qi Li , Tao Fu , Fabi Zhang*,Double grating high efficiency nanostructured silicon-based ultra-thinsolar cells,Results in Physics 19 (2020) 103442.

(18) Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito,Tooru Tanaka and Qixin Guo, Impacts of oxygen radical ambient on structural and optical properties of (AlGa)2O3 films deposited by pulsed laser deposition, AIP Advances, 2020, 10: 065125;

(17) Haiou Li, Xiao Xiao, Juan Zhou, Tangyou Sun, Tao Fu, Rong Wang, Qi Li, Xiuyun Zhang, Fabi Zhang(通讯作者), Evolution of morphology and structure of nano- (GaIn)2O3 with temperatures changes, J. of Nanophotonics, 2020, 14:026011.

(16) Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Xinqiang Wang; Qixin Guo, Conductive transparent (InGa)2O3 film as host for rare earth Eu. AIP Advances, 2020, 10:025024.

(15) Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito,Tooru Tanaka and Qixin Guo, Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition, CrystEngComm, 2020, 22:142

(14) Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Tangyou Sun, Tao Fu, Gongli Xiao, Yonghe Chen, Yanrong Deng, Jianghui Zhai, Mixed Phase (GaIn)2O3 Films with a Single Absorption Edge Grown by Magnetron Sputtering, Journal of Elec Materi, 2019, 48: 8061

(13) Fabi Zhang, Haiou Li, Qixin Guo, Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition. Journal of Electronic Materials, 2018, 47:6635

(12) Q. Li, Y. Wen, F. Zhang (通讯作者), H. Li, G. Xiao, Y. Chen and T. Fu, A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer, Results in Physics, 2018, 10: 46-54.

(11) Fabi Zhang, Haiou Li, Yi-Tao Cui, Guo-Ling Li, and Qixin Guo, Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films, AIP ADVANCES, 2018, 8: 045112

(10) H. Li, Y. Li, G. Xiao, X. Gao, Q. Li, Y. Chen, T. Fu, T. Sun, F. Zhang (通讯作者) and N. Yu, Simple fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties, Optical Materials Express, 2018, 8 (4): 794

(9)  Fabi Zhang, Haiou Li, Makoto Arita, Qixin Guo, Ultraviolet detectors based on (GaIn)2O3 films, Opt. Mater. Express, 2017.9, 7: 3769

(8)  Fabi Zhang, Makoto Arita, Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Teruaki Motooka, Qixin Guo, Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition, Applied Physics Letters, 2016, 109: 102105

(7)  Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Electrical properties of Si doped Ga2O3 films grown by pulsed Laser deposition,Journal of Materials Science: Materials in Electronics, 2015, 26: 9624

(6)  Fabi Zhang, Hideki Jan, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka,Makoto Arita,Qixin Guo,Toward the understanding of annealing effects on (GaIn)2O3 films, Thin Solid Films, 2015, 578:1-6。

(5)  Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo, Wide bandgap engineering of (AlGa)2O3 films, Applied Physics Letters,2014, 105: 162107。

(4)  Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Thermal annealing impact on crystal quality of (GaIn)2O3 alloys, Journal of Alloys and Compounds, 2014, 614:173-176。

(3)  Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Wide bandgap engineering of (GaIn)2O3 films, Solid State Communications, 2014, 186:28-31。

(2)  F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo, Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition, Journal of Crystal Growth, 2014, 387:96-100.

(1)  Zhang, Fabi; Ikoma, Yoshifumi; Zhang, Jinping; Xu, Ke; Saito, Katsuhiko; Guo, Qixin (2012). Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence. Journal of Vacuum Science & Technology A, 2012, 30(2), 021508


 

学术著作
Fabi Zhang ; Growth and characterization of Ga2O3-based wide bandgap semiconductor films, 华中科技大学出版社, 2020 
科研项目

1. 国家自然科学基金,61764001,脉冲激光沉积镓铟氧化物薄膜能带工程相关问题研究,2018/01-2021/1241万元,在研,主持

2. 国家自然科学基金,61464003,具有深槽超结的折叠漂移区SOI LIGBT新结构和耐压模型,2015/01-2018/1248万元,在研,参与   

3. 国家自然科学基金,61077036,脉冲驱动下蓝光LED的量子效率和光调制特性的研究,2011/01-2013/1230万元     ,已结题,参与

4. 广西人才计划,广西高校引进海外高层次人才“百人计划”,2016/09-2020/0850万元    ,在研,主持

5. 广西区教育厅中青年基础能力提升项目,2017KY0201, 基于新材料-氧化稼的日盲探测器研究,2017/01-2018/123万元,在研,主持

6. 广西自然科学基金,2015GXNSFAA139300,基于折叠漂移区的横向高压器件新结构和二维耐压模型,2015/01-2018/125万元,在研,参与

7. 广西自然科学基金,2013GXNSFBA019269,基于光频分复用和二级喇曼放大的远距离布里渊光纤传感研究,2013/01-2016/125万元,已结题,参与

8、 广西高校科学技术研究项目, 2013ZD026,高性能低成本基于金属/电介质/金属纳米结构电致表面等离子激元源器件研究,2013.1-2015.12,6万,已结题,参与

9、广西精密导航技术与应用重点实验室主任基金, DH201511,影响耐高压氧化镓半导体薄膜结构与性能的关键参数,2016-2017,3万,已结题,主持

10、广西精密导航技术与应用重点实验室主任基金, DH201701,基于导航应用的镓铟氧薄膜紫外探测器关键技术研究,2018-2019,6万,已结题,主持

 

 

 

知识产权

(1) 张法碧; 王长杰; 周娟; 李海鸥; 孙堂友; 傅涛; 肖功利; 陈永和; 刘兴鹏; 李琦; 洪莉; 邓艳容 ; 一种稀土共掺杂的氧化镓荧光材料及其制备方法和应用, 2021-3-30, 中国, CN202110338689.9 (专利) 

(2) 张法碧; 王长杰; 周娟; 李海鸥; 孙堂友; 傅涛; 肖功利; 陈永和; 刘兴鹏; 李琦; 洪莉; 邓艳容 ; 稀土铈掺杂氧化镓纳米材料的制备方法, 2020-12-22, 中国, CN202011526473.7 (专利) 

(3) 张法碧; 肖骁; 孙巾寓; 赵昀云; 张秀云; 李海鸥; 陈永和; 李琦; 肖功利; 蒋行国; 翟江辉; 孙堂 友; 邓艳容 ; 一种氧化镓纳米棒的制备方法及产品, 2018-9-6, 中国, ZL201811035848.2 (专利) 

(4) 张法碧; 肖骁; 孙巾寓; 赵昀云; 张秀云; 李海鸥; 陈永和; 李琦; 肖功利; 蒋行国; 翟江辉; 孙堂 友; 邓艳容 ; 一种核壳结构Ga2O3/In2O3纳米晶粒及其制备方法, 2019-1-17, 中国, ZL201910042497.6 (专利)

联系信息

Email:540084408@qq.com

常用链接

http://dh.guet.edu.cn